Product Details
IKWH40N65EH7XKSA1
Status
Stock in
SKU
C20191522
Category
Discrete Semiconductors
Manufacturer
Infineon
Datasheet
N/A
Quote Only i
Available
Please allow 3-6 weeks for product lead time
Multiples of: 1 i
208W 80A 650V TO-247-3 Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | Infineon |
| Package | TO-247-3 |
| Pd - Power Dissipation | 208W |
| Td(off) | 141ns |
| Td(on) | 18ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 2.016nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.9V@0.35mA |
| Gate Charge(Qg) | 81nC@40A,15V |
| Operating Temperature | -40℃~+175℃ |
| Vce Saturation(VCE(sat)) | 1.65V@40A,15V |
| Reverse Recovery Time(trr) | 74ns |
| Switching Energy(Eoff) | 420uJ |
| Turn-On Energy (Eon) | 970uJ |
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