IXYP15N65C3D1M-HXY
Status
Stock in
SKU
C49003315
Category
Discrete Semiconductors
Manufacturer
HXY MOSFET
Datasheet
N/A
Quote Only đ
Available
Please allow 3-6 weeks for product lead time
Multiples of: 1 âšī¸
250W 30A 650V TO-220F Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-220F |
| Td(off) | 156ns |
| Pd - Power Dissipation | 250W |
| Td(on) | 46ns |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 11pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6.4V@400uA |
| Gate Charge(Qg) | 51nC |
| Operating Temperature | -40â~+175â |
| Vce Saturation(VCE(sat)) | 1.79V@15A,15V |
| Reverse Recovery Time(trr) | 159ns |
| Switching Energy(Eoff) | 190uJ |
| Turn-On Energy (Eon) | 400uJ |
| Pulsed Current- Forward(Ifm) | 150A |
| Output Capacitance(Coes) | 34pF |
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