Product Details
SGT50T65FD1PN
Status
Stock in
SKU
C2761787
Category
Discrete Semiconductors
Manufacturer
Hangzhou Silan Microelectronics
Datasheet
N/A
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235W 100A 650V FS (Field Stop) TO-3P-3 Single IGBTs RoHS
| Category | Single IGBTs |
|---|---|
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-3P-3 |
| Pd - Power Dissipation | 235W |
| Td(off) | 130ns |
| Td(on) | 45ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 42pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V |
| Operating Temperature | -55℃~+150℃ |
| Gate Charge(Qg) | 46nC@15V |
| Vce Saturation(VCE(sat)) | 2V@50A,15V |
| Reverse Recovery Time(trr) | 33ns |
| Switching Energy(Eoff) | 3.8mJ |
| Turn-On Energy (Eon) | 1mJ |
| Input Capacitance(Cies) | 4.5nF |
| Pulsed Current- Forward(Ifm) | - |
| Output Capacitance(Coes) | 100pF |
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